TGM2635-CP, RF Amplifier 7.9-11GHz 100W GaN PAE 35% SSG 26dB
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Описание
Semiconductors\Wireless & RF Integrated Circuits\RF Amplifier
GaN SolutionsQorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.
Технические параметры
Brand: | Qorvo |
Factory Pack Quantity: Factory Pack Quantity: | 10 |
Gain: | 26 dB |
Input Return Loss: | 12 dB |
Manufacturer: | Qorvo |
Maximum Operating Temperature: | +85 C |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Operating Frequency: | 7.9 GHz to 11 GHz |
Operating Supply Current: | 1.3 A |
Operating Supply Voltage: | 28 V |
Package / Case: | 19.05 mm x 19.05 mm x 4.52 mm |
Packaging: | Waffle |
Part # Aliases: | TGM2635 1124577 |
Pd - Power Dissipation: | 316 W |
Product Category: | RF Amplifier |
Product Type: | RF Amplifier |
Series: | TGM2635 |
Subcategory: | Wireless & RF Integrated Circuits |
Technology: | GaN SiC |
Type: | Power Amplifiers |
Вес, г | 59.57 |
Техническая документация
Datasheet
pdf, 955 КБ
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