AONR21321

230 руб.
от 2 шт.160 руб.
от 10 шт.119 руб.
Добавить в корзину 1 шт. на сумму 230 руб.
Номенклатурный номер: 8008496103
Бренд: Alpha & Omega

Описание

Электроэлемент
Транзистор P-MOSFET, полевой, -30В, -20А, 9,6Вт, DFN3x3

Технические параметры

Channel Mode Enhancement
Continuous Drain Current 13(A)
Drain-Source On-Volt 30(V)
Gate-Source Voltage (Max) ±25(V)
Mounting Surface Mount
Number of Elements 1
Operating Temp Range -55C to 150C
Operating Temperature Classification Military
Package Type DFN EP
Packaging Tape and Reel
Pin Count 8
Polarity P
Power Dissipation 4.1(W)
Rad Hardened No
Type Power MOSFET
Channel Type P
Configuration Single Quad Drain Triple Source
Maximum Continuous Drain Current - (A) 13
Maximum Drain Source Resistance - (mOhm) 16.5@10V
Maximum Drain Source Voltage - (V) 30
Maximum Gate Source Voltage - (V) ??25
Maximum Gate Threshold Voltage - (V) 2.3
Maximum Power Dissipation - (mW) 4100
Military No
Number of Elements per Chip 1
Operating Temperature - (??C) -55~150
Supplier Package DFN EP
Typical Gate Charge @ 10V - (nC) 21
Typical Gate Charge @ Vgs - (nC) 21@10VI11@4.5V
Typical Input Capacitance @ Vds - (pF) 1180@15V
Continuous Drain Current (Id) 50A
Drain Source On Resistance (RDS(on)@Vgs,Id) 15mΩ@10V
Drain Source Voltage (Vdss) 30V
Gate Threshold Voltage (Vgs(th)@Id) 3V@250uA
Input Capacitance (Ciss@Vds) 1.75nF
Power Dissipation (Pd) 3W
Вес, г 0.12

Техническая документация

Документация
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