BC856ALG
92 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
40 руб.
от 10 шт. —
22 руб.
от 100 шт. —
6.80 руб.
Добавить в корзину 2 шт.
на сумму 184 руб.
Описание
Электроэлемент
Bipolar (BJT) Single Transistor, General Purpose, PNP, -65 V, 100 MHz, 225 mW, -100 mA, 100 RoHS Compliant: Yes
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | -80 V |
| Collector- Emitter Voltage VCEO Max | -65 V |
| Collector-Emitter Saturation Voltage | -0.65 V |
| Configuration | Single |
| Continuous Collector Current | -0.1 A |
| DC Collector/Base Gain hfe Min | 125 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product fT | 100 MHz |
| Height | 0.94 mm |
| Length | 2.9 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 0.1 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 225 mW |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | BC856AL |
| Transistor Polarity | PNP |
| Unit Weight | 0.050717 oz |
| Width | 1.3 mm |
| Вес, г | 0.03 |
Техническая документация
Datasheet
pdf, 148 КБ
