MMBT3904LT3G, MMBT3904LT3G NPN Transistor, 900 mA, 40 V, 3-Pin SOT-23
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5 руб.
Кратность заказа 200 шт.
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на сумму 1 000 руб.
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Описание
Semiconductors\Discrete Semiconductors\Bipolar Transistors
The ON Semiconductor MMBT3904LT1G is an NPN bipolar transistor designed for linear and switching applications.
Технические параметры
| Maximum Collector Base Voltage | 60 V dc |
| Maximum Collector Emitter Voltage | 40 V |
| Maximum DC Collector Current | 900 mA |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Frequency | 100 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 300 mW |
| Minimum DC Current Gain | 100 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | NPN |
| Collector Current (Ic) | 200mA |
| Collector Cut-Off Current (Icbo) | - |
| Collector-Emitter Breakdown Voltage (Vceo) | 40V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@50mA, 5mA |
| DC Current Gain (hFE@Ic,Vce) | 100@10mA, 1V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 300mW |
| Transition Frequency (fT) | 300MHz |
| Вес, г | 1 |
