AON6358, Транзистор N-MOSFET, полевой, 30В, 67А, 19Вт, DFN5x6
200 руб.
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130 руб.
от 30 шт. —
108 руб.
от 100 шт. —
92.16 руб.
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Описание
Описание Транзистор N-MOSFET, полевой, 30В, 67А, 19Вт, DFN5x6
Технические параметры
Continuous Drain Current (Id) | 85A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.8mΩ@10V, 20A |
Drain Source Voltage (Vdss) | 30V |
Gate Threshold Voltage (Vgs(th)@Id) | 1.8V@250uA |
Input Capacitance (Ciss@Vds) | 2.2nF@15V |
Operating Temperature | -55℃~+150℃@(Tj) |
Power Dissipation (Pd) | 48W |
Reverse Transfer Capacitance (Crss@Vds) | 100pF@15V |
Total Gate Charge (Qg@Vgs) | 15nC@10V |
Type | N Channel |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current - (A) | 42 |
Maximum Drain Source Resistance - (mOhm) | 2.2@10V |
Maximum Drain Source Voltage - (V) | 30 |
Maximum Gate Source Voltage - (V) | ?20 |
Maximum Gate Threshold Voltage - (V) | 2.2 |
Maximum Operating Temperature - (?C) | 150 |
Maximum Power Dissipation - (mW) | 6200 |
Minimum Operating Temperature - (?C) | -55 |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Pin Count | 8 |
Standard Package Name | DFN |
Supplier Package | DFN EP |
Technology | AlphaMOS |
Typical Gate Charge @ 10V - (nC) | 33 |
Typical Gate Charge @ Vgs - (nC) | 33@10V|15@4.5V |
Typical Input Capacitance @ Vds - (pF) | 2200@15V |
Вес, г | 0.14 |
Техническая документация
Документация
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