AONR21321, Транзистор P-MOSFET, полевой, -30В, -20А, 9,6Вт, DFN3x3
58 руб.
Кратность заказа 5 шт.
от 50 шт. —
33 руб.
от 150 шт. —
29 руб.
от 500 шт. —
23.98 руб.
Добавить в корзину 5 шт.
на сумму 290 руб.
Описание
30V 24A 16.5mΩ@12A,10V 2.3V@250uA P Channel DFN-8(3x3) MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 50A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 15mΩ@10V |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Input Capacitance (Ciss@Vds) | 1.75nF |
| Power Dissipation (Pd) | 3W |
| Type | P Channel |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| Maximum Continuous Drain Current - (A) | 13 |
| Maximum Drain Source Resistance - (mOhm) | 16.5@10V |
| Maximum Drain Source Voltage - (V) | 30 |
| Maximum Gate Source Voltage - (V) | ??25 |
| Maximum Gate Threshold Voltage - (V) | 2.3 |
| Maximum Power Dissipation - (mW) | 4100 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Supplier Package | DFN EP |
| Typical Gate Charge @ 10V - (nC) | 21 |
| Typical Gate Charge @ Vgs - (nC) | 21@10VI11@4.5V |
| Typical Input Capacitance @ Vds - (pF) | 1180@15V |
| Continuous Drain Current | 13(A) |
| Drain-Source On-Volt | 30(V) |
| Gate-Source Voltage (Max) | ±25(V) |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | DFN EP |
| Polarity | P |
| Power Dissipation | 4.1(W) |
| Rad Hardened | No |
| Вес, г | 0.12 |
Техническая документация
Документация
pdf, 318 КБ
