AON7524, Транзистор МОП n-канальный, полевой, 30В, 22А, 12,8Вт, DFN-8
180 руб.
от 10 шт. —
110 руб.
от 30 шт. —
89 руб.
от 100 шт. —
74.62 руб.
Добавить в корзину 1 шт.
на сумму 180 руб.
Описание
30V 3.3mΩ@10V,20A 1.2V@250uA N Channel DFN-8(3x3) MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 25A;28A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.3mΩ@10V, 20A |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.2V@250uA |
| Input Capacitance (Ciss@Vds) | 2.25nF@15V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 3.1W;32W |
| Total Gate Charge (Qg@Vgs) | 50nC@10V |
| Type | N Channel |
| Automotive | Unknown |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current - (A) | 28 |
| Maximum Drain Source Resistance - (mOhm) | 3.3@10V |
| Maximum Drain Source Voltage - (V) | 30 |
| Maximum Gate Source Voltage - (V) | ?12 |
| Maximum Gate Threshold Voltage - (V) | 1.2 |
| Maximum Power Dissipation - (mW) | 32000 |
| Military Qualified | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (?C) | -55~150 |
| Pin Count | 8 |
| Process Technology | AlphaMOS |
| Supplier Package | DFN-A EP |
| Typical Gate Charge @ 10V - (nC) | 37 |
| Typical Gate Charge @ Vgs - (nC) | 37@10VI16@4.5V |
| Typical Input Capacitance @ Vds - (pF) | 2250@15V |
| Вес, г | 1 |
Техническая документация
Документация
pdf, 263 КБ
