MT29F4G08ABBDAHC-IT:D, NAND Flash SLC 4G 512MX8 FBGA
см. техническую документацию
Описание
MT29F4G08 is a NAND flash memory. NAND flash device include an asynchronous data interface for high-performance I/O operations. This device use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND flash die is the minimum unit that can independently execute commands and report status. A NAND flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal.
• Single-level cell (SLC) technology, asynchronous I/O performance
• Array performance, read page is 45µs (typical)
• Command set is ONFI NAND flash protocol, read unique ID
• Operation status byte provides software method for detecting, operation completion
• First block (block address 00h) is valid when shipped from factory
• RESET (FFh) required as first command after power-on, quality and reliability
• Internal data move operations supported within the plane from which data is read
• 4Gb density, 8bit device width, SLC level
• 1.8V (1.7-1.95V) operating voltage, asynchronous interface
• 63-ball VFBGA (10.5 x 13 x 1.0mm) package, industrial operating temperature range from -40° to 85°C
Технические параметры
IC Case / Package | VFBGA |
Interfaces | Parallel |
Memory Configuration | 512M x 8bit |
Количество Выводов | 63вывод(-ов) |
Линейка Продукции | 1.8V SLC NAND Flash Memories |
Максимальная Рабочая Температура | 85°C |
Максимальная Тактовая Частота | 50МГц |
Максимальное Напряжение Питания | 1.95В |
Минимальная Рабочая Температура | -40°C |
Минимальное Напряжение Питания | 1.7В |
Монтаж Микросхемы | SMD(Поверхностный Монтаж) |
Номинальное Напряжение Питания | 1.8В |
Плотность Памяти | 4Гбит |
Тип Flash Памяти | SLC NAND |
Уровень Чувствительности к Влажности (MSL) | MSL 3-168 часов |