TGF2933, RF JFET Transistors DC-25GHz 7Watt NF 1.3dB GaN
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Описание
Semiconductors\Discrete Semiconductors\Transistors\RF Transistors
QPD GaN RF TransistorsQorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Технические параметры
| Application: | Defense and Aerospace, Broadband Wireless |
| Brand: | Qorvo |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Gain: | 15 dB |
| Id - Continuous Drain Current: | 80 mA |
| Manufacturer: | Qorvo |
| Maximum Operating Temperature: | +85 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | SMD/SMT |
| NF - Noise Figure: | 1.3 dB |
| Operating Frequency: | DC to 25 GHz |
| Output Power: | 7.2 W |
| Package / Case: | DIE |
| Packaging: | Gel Pack |
| Part # Aliases: | 1113799 |
| Pd - Power Dissipation: | 8.9 W |
| Product Category: | RF JFET Transistors |
| Product Type: | RF JFET Transistors |
| Series: | TGF2933 |
| Subcategory: | Transistors |
| Technology: | GaN-on-SiC |
| Transistor Polarity: | N-Channel |
| Transistor Type: | HEMT |
Техническая документация
Datasheet
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