IRL3803S
470 руб.
от 2 шт. —
400 руб.
от 10 шт. —
339 руб.
Добавить в корзину 1 шт.
на сумму 470 руб.
Описание
Электроэлемент
MOSFET, N-CH, 30V, 140A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Po
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current - (A) | 140 |
| Maximum Drain Source Resistance - (mOhm) | 6@10V |
| Maximum Drain Source Voltage - (V) | 30 |
| Maximum Gate Source Voltage - (V) | ??16 |
| Maximum Power Dissipation - (mW) | 3800 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~175 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Process Technology | HEXFET |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| Typical Gate Charge @ Vgs - (nC) | 140(Max)@4.5V |
| Typical Input Capacitance @ Vds - (pF) | 5000@25V |
| Вес, г | 1.732 |
Техническая документация
Datasheet IRL3803STRRPBF
pdf, 397 КБ
