C6D10065Q-TR, Schottky Diodes & Rectifiers SiC, Schottky Diode, 10A, 650V, QFN 8x8 T&R, Industrial
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Описание
Semiconductors\Discrete Semiconductors\Diodes & Rectifiers\Schottky Diodes & Rectifiers
650V Silicon Carbide Schottky DiodesWolfspeed 650V Silicon Carbide (SiC) Schottky Diode technology is optimized for high-performance power electronics applications, including industrial power supplies, server/telecom, energy storage systems, and uninterruptible power supplies. The 650V SiC Schottky Diodes feature an operating voltage of 400V to 450V, providing an excellent advantage to power supply applications. The SiC Diodes are ideal for paralleling devices by excluding thermal runaway problems. The Diodes offer a 2A to 50A current rating and are available in multiple packages.
Технические параметры
| Brand: | Wolfspeed |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| If - Forward Current: | 39 A |
| Ifsm - Forward Surge Current: | 61 A |
| Ir - Reverse Current: | 2 uA |
| Manufacturer: | Wolfspeed |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Operating Temperature Range: | -55 C to+175 C |
| Package / Case: | QFN-4 |
| Pd - Power Dissipation: | 119 W |
| Product Category: | Schottky Diodes & Rectifiers |
| Product Type: | Schottky Diodes & Rectifiers |
| Product: | Schottky Silicon Carbide Diodes |
| Subcategory: | Diodes & Rectifiers |
| Technology: | SiC |
| Vf - Forward Voltage: | 1.27 V |
| Vr - Reverse Voltage: | 650 V |
| Vrrm - Repetitive Reverse Voltage: | 650 V |
Техническая документация
Datasheet
pdf, 671 КБ
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