IRF3710LPBF, Транзистор N-МОП, полевой, 100В, 57А, 200Вт, TO262
440 руб.
от 10 шт. —
290 руб.
от 50 шт. —
248 руб.
от 100 шт. —
206.75 руб.
Добавить в корзину 1 шт.
на сумму 440 руб.
Описание
TO-262-3 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | - |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | - |
| Drain Source Voltage (Vdss) | - |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Input Capacitance (Ciss@Vds) | - |
| Power Dissipation (Pd) | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | - |
| Type | - |
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 57A(Tc) |
| Drain to Source Voltage (Vdss) | 100V |
| Family | FETs-Single |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Gate Charge (Qg) @ Vgs | 130nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3130pF @ 25V |
| Mounting Type | Through Hole |
| Online Catalog | N-Channel Standard FETs |
| Other Names | *IRF3710LPBF |
| Package / Case | TO-262-3 Long Leads, I?Pak, TO-262AA |
| Packaging | Tube |
| Power - Max | 200W |
| Product Training Modules | High Voltage Integrated Circuits(HVIC Gate Drivers) |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 28A, 10V |
| Series | HEXFET® |
| Standard Package | 50 |
| Supplier Device Package | TO-262 |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Вес, г | 2.49 |
Техническая документация
Datasheet IRF3710S, IRF3710L
pdf, 303 КБ
