QPD2040D, RF JFET Transistors 0.40 mm Pwr pHEMT
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см. техническую документацию
см. техническую документацию
900 шт., срок 7-9 недель
2 390 руб.
Кратность заказа 100 шт.
Добавить в корзину 100 шт.
на сумму 239 000 руб.
Описание
Semiconductors\Discrete Semiconductors\Transistors\RF Transistors
QPD2040D 400um Discrete GaAs pHEMT DieQorvo QPD2040D 400um Discrete GaAs pHEMT Die is designed using Qorvo's proven standard 0.25um power pHEMT production process. The process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2040D operates from DC to 20GHz with 26dBm typical output power at P1dB and a gain of 13dB and 55% power-added efficiency at 1dB compression. This performance level is ideal for high-efficiency applications. The protective overcoat layer with silicon nitride provides environmental robustness and scratch protection.
Технические параметры
| Brand: | Qorvo |
| Factory Pack Quantity: Factory Pack Quantity: | 100 |
| Gain: | 13 dB |
| Manufacturer: | Qorvo |
| NF - Noise Figure: | 1.1 dB |
| Package / Case: | 0.41 m x 0.34 mm |
| Packaging: | Reel |
| Product Category: | RF JFET Transistors |
| Product Type: | RF JFET Transistors |
| Series: | QPD2040D |
| Subcategory: | Transistors |
| Technology: | GaAs |
| Transistor Type: | pHEMT |
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