SA111PQ, Discrete Semiconductor Modules 650 V, 24 A Silicon Carbide Intelligent Power Module Half-Bridge
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Описание
Semiconductors\Discrete Semiconductors\Discrete Semiconductor Modules
SA111PQ Silicon Carbide Half-Bridge Power ModuleApex Microtechnology SA111PQ Silicon Carbide Half-Bridge Power Module is created with Silicon Carbide (SiC) technology. The module features a leading-edge package design to expand thermal efficiency and power density in analog modules. The SA111PQ is housed in a surface-mount package with a body of 20mm x 20mm. It can provide continuous output currents of 32A, manage supply voltages of up to 650V, and achieve switching frequencies of up to 1MHz.
Технические параметры
Brand: | Apex Microtechnology |
Factory Pack Quantity: Factory Pack Quantity: | 1 |
Fall Time: | 30 ns |
Manufacturer: | Apex Microtechnology |
Maximum Operating Temperature: | +125 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | SMD/SMT |
Operating Supply Voltage: | 650 V |
Output Current: | 24 A |
Package / Case: | QFP-52 |
Pd - Power Dissipation: | 56 W |
Product Category: | Discrete Semiconductor Modules |
Product Type: | Discrete Semiconductor Modules |
Product: | Power MOSFET Modules |
Rise Time: | 45 ns |
Series: | SA111 |
Subcategory: | Discrete Semiconductor Modules |
Transistor Polarity: | N-Channel |
Type: | Half Bridge Module |
Техническая документация
Datasheet
pdf, 1270 КБ
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