AONR21321
140 руб.
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120 руб.
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55.38 руб.
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на сумму 280 руб.
Номенклатурный номер: 8021311157
Бренд: Alpha & Omega
Описание
Транзистор P-MOSFET, полевой, -30В, -20А, 9,6Вт, DFN3x3
Технические параметры
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single Quad Drain Triple Source |
Maximum Continuous Drain Current - (A) | 13 |
Maximum Drain Source Resistance - (mOhm) | 16.5@10V |
Maximum Drain Source Voltage - (V) | 30 |
Maximum Gate Source Voltage - (V) | ??25 |
Maximum Gate Threshold Voltage - (V) | 2.3 |
Maximum Power Dissipation - (mW) | 4100 |
Military | No |
Number of Elements per Chip | 1 |
Operating Temperature - (??C) | -55~150 |
Packaging | Tape and Reel |
Pin Count | 8 |
Supplier Package | DFN EP |
Typical Gate Charge @ 10V - (nC) | 21 |
Typical Gate Charge @ Vgs - (nC) | 21@10VI11@4.5V |
Typical Input Capacitance @ Vds - (pF) | 1180@15V |
Continuous Drain Current (Id) | 50A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 15mΩ@10V |
Drain Source Voltage (Vdss) | 30V |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
Input Capacitance (Ciss@Vds) | 1.75nF |
Power Dissipation (Pd) | 3W |
Type | P Channel |
Continuous Drain Current | 13(A) |
Drain-Source On-Volt | 30(V) |
Gate-Source Voltage (Max) | ±25(V) |
Mounting | Surface Mount |
Number of Elements | 1 |
Operating Temp Range | -55C to 150C |
Operating Temperature Classification | Military |
Package Type | DFN EP |
Polarity | P |
Power Dissipation | 4.1(W) |
Rad Hardened | No |
Техническая документация
Документация
pdf, 318 КБ