CCB021M12FM3T, Discrete Semiconductor Modules SiC, Module, 21mohm, 1200V, 33.8 mm, FM3, Six-Pack, Industrial, Gen 3, Pre-Applied TIM

CCB021M12FM3T, Discrete Semiconductor Modules SiC, Module, 21mohm, 1200V, 33.8 mm, FM3, Six-Pack, Industrial, Gen 3, Pre-Applied TIM
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см. техническую документацию
55 шт., срок 6-8 недель
Бесплатная доставка 5Post, СДЭК и Я.Доставка
60 470 руб.
от 10 шт.52 730 руб.
от 18 шт.50 750 руб.
от 54 шт.49 953.39 руб.
Добавить в корзину 1 шт. на сумму 60 470 руб.
Номенклатурный номер: 8021802785
Артикул: CCB021M12FM3T
Бренд: WOLFSPEED

Описание

Semiconductors\Discrete Semiconductors\Discrete Semiconductor Modules
WolfPACK™ SiC-Based Power Modules
Wolfspeed WolfPACK™ SiC-Based Power Modules are simple and designed to provide clean, reliable power for energy conversion systems. These modules offer incredibly low losses in a package that lends itself extremely well to automation and manufacturing at scale. These Wolfspeed WolfPACK modules come in SiC MOSFET half-bridge and SiC MOSFET six-pack configurations with a variety of mΩ options. The devices feature a compact footprint and can be used to design a streamlined, higher power density system. They can help system designers enable a more compact solution than achievable with either multiple discrete devices or with larger, high-ampacity modules.

Технические параметры

Brand: Wolfspeed
Configuration: 3-Phase Bridge
Factory Pack Quantity: Factory Pack Quantity: 54
Id - Continuous Drain Current: 51 A
Manufacturer: Wolfspeed
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -40 C
Mounting Style: Chassis Mount
Package / Case: 47.62 mm x 33.5 mm
Packaging: Tray
Product Category: Discrete Semiconductor Modules
Product Type: Discrete Semiconductor Modules
Product: Power MOSFET Modules
Rds On - Drain-Source Resistance: 21 mOhms
Series: WolfPACK
Subcategory: Discrete Semiconductor Modules
Technology: SiC
Transistor Polarity: N-Channel
Type: Six Pack Module
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs - Gate-Source Voltage: -4 V, 15 V
Vgs th - Gate-Source Threshold Voltage: 3.6 V

Техническая документация

Datasheet
pdf, 2033 КБ

Сроки доставки

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