SI3415-TP
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Описание
P-Channel MOSFETS Micro Commercial Components (MCC) P-Channel Medium Power MOSFETS feature a low on-resistance (RDS) range from 0.013Ω to 0.52Ω and a high voltage version up to 800V. These MOSFETs utilize advanced trench MOSFET process technology in a wide range of surface-mount packages, including SOT, DFN, SOP, and Dpak. The P-Channel MOSFETs have an operating temperature range from -55°C to 150°C or 175°C.
Технические параметры
| Brand: | Micro Commercial Components(MCC) |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 35 ns |
| Forward Transconductance - Min: | 8 S |
| Id - Continuous Drain Current: | 4 A |
| Manufacturer: | Micro Commercial Components(MCC) |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOT-23-3 |
| Pd - Power Dissipation: | 350 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 17.2 nC |
| Rds On - Drain-Source Resistance: | 50 mOhms |
| Rise Time: | 17 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 94 ns |
| Typical Turn-On Delay Time: | 9.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
Техническая документация
Datasheet
pdf, 782 КБ
