IS46R16160D-5TLA1
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Описание
IS43R32800D 8Mx32 256-Mbit DDR SDRAM
ISSI IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268.435.456-bit memory array is internally organized as four banks of 64Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages.
ISSI IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268.435.456-bit memory array is internally organized as four banks of 64Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages.
Технические параметры
| Access Time: | 5 ns |
| Brand: | ISSI |
| Data Bus Width: | 16 bit |
| Factory Pack Quantity: Factory Pack Quantity: | 108 |
| Manufacturer: | ISSI |
| Maximum Clock Frequency: | 200 MHz |
| Maximum Operating Temperature: | +85 C |
| Memory Size: | 256 Mbit |
| Minimum Operating Temperature: | -40 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Organization: | 16 M x 16 |
| Package / Case: | TSOP-66 |
| Packaging: | Tray |
| Product Category: | DRAM |
| Product Type: | DRAM |
| Series: | IS46R16160D |
| Subcategory: | Memory & Data Storage |
| Supply Current - Max: | 260 mA |
| Supply Voltage - Max: | 2.7 V |
| Supply Voltage - Min: | 2.3 V |
| Type: | SDRAM-DDR |
Техническая документация
Datasheet
pdf, 1022 КБ
