BPW34
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см. техническую документацию
см. техническую документацию
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Альтернативные предложения2
Описание
Описание Точечный ИК-фотодиод, THT, 900нм, 430-1000нм, 65°, 215мВт
Технические параметры
| Dark Current | 2nA |
| Maximum Operating Temperature | 85в„ѓ |
| Minimum Operating Temperature | -40в„ѓ |
| Spectral Range | 400nm~1100nm |
| Wavelength | 850nm |
| Brand | Vishay Semiconductors |
| Factory Pack Quantity | 3000 |
| Fall Time | 100 ns |
| Half Intensity Angle Degrees | 65 deg |
| Height | 2 mm |
| Length | 4.5 mm |
| Manufacturer | Vishay |
| Mounting Style | Through Hole |
| Noise Equivalent Power - NEP | 4E-14 W/sqrt Hz |
| Packaging | Tube |
| Pd - Power Dissipation | 215 mW |
| Peak Wavelength | 900 nm |
| Photocurrent | 70 uA |
| Product | PIN Photodiodes |
| Product Category | Photodiodes |
| Rise Time | 100 ns |
| RoHS | Details |
| Vr - Reverse Voltage | 60 V |
| Width | 4.3 mm |
| Макс. спектральная чувствительность, нм | 950 |
| Макс.обратное напряжение, В | 60 |
| Обратный темновой ток, нА | 2 |
| Тип корпуса | ТО-5 |
| Тип фотодиода | PIN |
| Угол получувствительности | 65 |
| Amplifier Function | No |
| Breakdown Voltage | 60V |
| Diode Material | Si |
| Maximum Wavelength Detected | 1100nm |
| Minimum Wavelength Detected | 430nm |
| Mounting Type | Through Hole |
| Number of Pins | 2 |
| Polarity | Forward |
| Series | BPW |
| Spectrums Detected | Infrared, Visible Light |
| Typical Fall Time | 100ns |
| Typical Rise Time | 100ns |
| Wavelength of Peak Sensitivity | 900nm |
| Automotive | No |
| ECCN (US) | EAR99 |
| Maximum Dark Current (nA) | 30 |
| Maximum Fall Time (ns) | 100(Typ) |
| Maximum Light Current (uA) | 75(Typ) |
| Maximum Operating Temperature (°C) | 100 |
| Maximum Power Dissipation (mW) | 215 |
| Maximum Reverse Voltage (V) | 60 |
| Maximum Rise Time (ns) | 100(Typ) |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Through Hole |
| Part Status | Active |
| PCB changed | 2 |
| Peak Wavelength (nm) | 900 |
| Photodiode Material | Si |
| Photodiode Type | PIN |
| Pin Count | 2 |
| PPAP | No |
| Type | Chip |
| Maximum Dark Current - (nA) | 30 |
| Maximum Fall Time - (ns) | 20 |
| Maximum Forward Voltage - (V) | 1.3 |
| Maximum Light Current - (uA) | 80 |
| Maximum Power Dissipation - (mW) | 150 |
| Maximum Reverse Voltage - (V) | 32 |
| Maximum Rise Time - (ns) | 20 |
| Military | No |
| Operating Temperature - (??C) | -40~100 |
| Peak Wavelength - (nm) | 850 |
| Photo Sensitivity | 0.62A/W |
| Standard Package Name | DIP |
| Supplier Package | DIL |
Техническая документация
Datasheet
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