IS62WV5128EBLL-45T2LI
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Описание
Описание IC: SRAM memory; 512kx8bit; 2.2?3.6V; 45ns; TSOP32; parallel Характеристики
Категория | Микросхема |
Тип | памяти |
Вид | SRAM |
Технические параметры
Access Time | 45ns |
ECCN | 3A991B2A |
HTSUS | 8542.32.0041 |
Memory Format | SRAM |
Memory Interface | Parallel |
Memory Size | 4Mb (512K x 8) |
Memory Type | Volatile |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Mounting Type | Surface Mount |
Operating Temperature | -40В°C ~ 85В°C (TA) |
Package | Tray |
Package / Case | 32-SOIC (0.400"", 10.16mm Width) |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | 32-TSOP II |
Technology | SRAM - Asynchronous |
Voltage - Supply | 2.2V ~ 3.6V |
Write Cycle Time - Word, Page | 45ns |
Access Time: | 45 ns |
Brand: | ISSI |
Factory Pack Quantity: Factory Pack Quantity: | 117 |
Interface Type: | Parallel |
Manufacturer: | ISSI |
Maximum Operating Temperature: | +85 C |
Memory Size: | 4 Mbit |
Memory Type: | SDR |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Organization: | 512 k x 8 |
Package / Case: | TSOP-32 |
Product Category: | SRAM |
Product Type: | SRAM |
Series: | IS62WV5128EBLL |
Subcategory: | Memory & Data Storage |
Supply Current - Max: | 22 mA |
Supply Voltage - Max: | 3.6 V |
Supply Voltage - Min: | 2.2 V |
Tradename: | PowerSaver |
Type: | Asynchronous |