UF3C065030B3
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Альтернативные предложения1
Номенклатурный номер: 8024723537
Бренд: Qorvo Inc.
Описание
High-Performance SiC FETs
UnitedSiC / Qorvo High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.
UnitedSiC / Qorvo High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.
Технические параметры
| Brand: | Qorvo |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |
| Fall Time: | 15 ns |
| Id - Continuous Drain Current: | 65 A |
| Manufacturer: | Qorvo |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -25 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | D2PAK-3 |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 242 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 51 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 27 mOhms |
| Rise Time: | 16 ns |
| Series: | UF3C |
| Subcategory: | MOSFETs |
| Technology: | SiC |
| Tradename: | SiC FET |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 57 ns |
| Typical Turn-On Delay Time: | 32 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
Техническая документация
Datasheet
pdf, 354 КБ
Сроки доставки
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