UJ4SC075011K4S

UJ4SC075011K4S
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565 шт., срок 7-9 недель
8 710 руб.
от 30 шт.6 090 руб.
от 120 шт.5 710 руб.
Добавить в корзину 1 шт. на сумму 8 710 руб.
Альтернативные предложения1
Номенклатурный номер: 8024821311
Бренд: Qorvo Inc.

Описание

High-Performance SiC FETs
UnitedSiC / Qorvo High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

Технические параметры

Brand: Qorvo/UnitedSiC
Factory Pack Quantity: Factory Pack Quantity: 30
Id - Continuous Drain Current: 104 A
Manufacturer: Qorvo
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: TO-247-4
Packaging: Tube
Pd - Power Dissipation: 357 W
Product Category: JFET
Product Type: JFETs
Rds On - Drain-Source Resistance: 11 mOhms
Series: UJ4SC
Subcategory: Transistors
Technology: SiC
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 750 V

Техническая документация

Datasheet
pdf, 589 КБ

Сроки доставки

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