UJ3C065030B3
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2022 шт., срок 7-9 недель
5 270 руб.
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Альтернативные предложения1
Номенклатурный номер: 8024919432
Бренд: Qorvo Inc.
Описание
High-Performance SiC FETs
UnitedSiC / Qorvo High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.
UnitedSiC / Qorvo High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.
Технические параметры
Brand: | Qorvo |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 800 |
Fall Time: | 15 ns |
Id - Continuous Drain Current: | 66 A |
Manufacturer: | Qorvo |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | D2PAK-3 |
Pd - Power Dissipation: | 250 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 51 nC |
Qualification: | AEC-Q101 |
Rds On - Drain-Source Resistance: | 35 mOhms |
Rise Time: | 19 ns |
Series: | UJ3C |
Subcategory: | MOSFETs |
Technology: | SiC |
Tradename: | SiC FET |
Transistor Polarity: | N-Channel |
Typical Turn-Off Delay Time: | 58 ns |
Typical Turn-On Delay Time: | 32 ns |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Vgs - Gate-Source Voltage: | -25 V, +25 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Техническая документация
Datasheet
pdf, 514 КБ
Сроки доставки
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