AUIRF6215STRL, 150V 13A 290mOhm@6.6A,10V P Channel D2PAK MOSFETs
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Описание
The Infineon single p channel HEXFET power MOSFET in D2-Pak package. It has fast switching and fully avalanche rated.
Технические параметры
Channel Mode | Enhancement |
Channel Type | P |
Maximum Continuous Drain Current | 13 A |
Maximum Drain Source Resistance | 0.29 Ω |
Maximum Drain Source Voltage | 150 V |
Maximum Gate Threshold Voltage | 4V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | D2PAK(TO-263) |
Pin Count | 3 |
Series | AUIRF |
Transistor Material | Silicon |
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 800 |
Fall Time: | 37 ns |
Forward Transconductance - Min: | 3.6 S |
Id - Continuous Drain Current: | 13 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-252-3 |
Pd - Power Dissipation: | 110 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 66 nC |
Qualification: | AEC-Q101 |
Rds On - Drain-Source Resistance: | 290 mOhms |
Rise Time: | 36 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Typical Turn-Off Delay Time: | 53 ns |
Typical Turn-On Delay Time: | 14 ns |
Vds - Drain-Source Breakdown Voltage: | 150 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Вес, г | 2.08 |