AUIRF6215STRL, 150V 13A 290mOhm@6.6A,10V P Channel D2PAK MOSFETs

Фото 1/2 AUIRF6215STRL, 150V 13A 290mOhm@6.6A,10V P Channel D2PAK MOSFETs
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Номенклатурный номер: 8025032970
Артикул: AUIRF6215STRL

Описание

The Infineon single p channel HEXFET power MOSFET in D2-Pak package. It has fast switching and fully avalanche rated.

Технические параметры

Channel Mode Enhancement
Channel Type P
Maximum Continuous Drain Current 13 A
Maximum Drain Source Resistance 0.29 Ω
Maximum Drain Source Voltage 150 V
Maximum Gate Threshold Voltage 4V
Mounting Type Surface Mount
Number of Elements per Chip 1
Package Type D2PAK(TO-263)
Pin Count 3
Series AUIRF
Transistor Material Silicon
Brand: Infineon Technologies
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 800
Fall Time: 37 ns
Forward Transconductance - Min: 3.6 S
Id - Continuous Drain Current: 13 A
Manufacturer: Infineon
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: TO-252-3
Pd - Power Dissipation: 110 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 66 nC
Qualification: AEC-Q101
Rds On - Drain-Source Resistance: 290 mOhms
Rise Time: 36 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: P-Channel
Typical Turn-Off Delay Time: 53 ns
Typical Turn-On Delay Time: 14 ns
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Вес, г 2.08

Техническая документация

Datasheet
pdf, 1226 КБ
Datasheet
pdf, 1181 КБ