STB40N60M2, Транзистор N-МОП, полевой, 600В, 22А, 250Вт, D2PAK
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
10 шт., срок 7 недель
1 460 руб.
от 10 шт. —
1 280 руб.
Добавить в корзину 1 шт.
на сумму 1 460 руб.
Альтернативные предложения2
Описание
MDMesh™ N-Channel Power MOSFETs
STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best R DS(on) *Q g in the industry.
STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best R DS(on) *Q g in the industry.
Технические параметры
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 11 ns |
Id - Continuous Drain Current: | 34 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | D2PAK-3(TO-263-3) |
Pd - Power Dissipation: | 250 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 57 nC |
Rds On - Drain-Source Resistance: | 88 mOhms |
Rise Time: | 13.5 ns |
Series: | STB40N60M2 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | MDmesh |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 96 ns |
Typical Turn-On Delay Time: | 20.5 ns |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Voltage: | -25 V, +25 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Вес, г | 2 |
Техническая документация
Datasheet
pdf, 1099 КБ
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.