Vishay P-channel power MOSFET, -100 V, -19 A, TO-220, IRF9540-PBF

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320 руб.

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Номенклатурный номер: 8026555308

Артикул: IRF9540-PBF

Semiconductors\Power Semiconductors

Описание Транзистор P-МОП, полевой, 100В 19A 150Вт 0,2Ом TO220AB Характеристики

Current - Continuous Drain (Id) @ 25В°C	19A(Tc)
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	61nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 25V
Manufacturer	Vishay Siliconix
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 175В°C(TJ)
Package / Case	TO-220-3
Packaging	Tube
Part Status	Active
Power Dissipation (Max)	150W(Tc)
Rds On (Max) @ Id, Vgs	200mOhm @ 11A, 10V
Series	-
Supplier Device Package	TO-220AB
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Channel Mode	Enhancement
Channel Type	P
Maximum Continuous Drain Current	19 A
Maximum Drain Source Resistance	200 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	150 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	TO-220AB
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	61 nC @ 10 V
Width	4.7mm