CGHV40100F
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см. техническую документацию
см. техническую документацию
81 750 руб.
от 10 шт. —
72 890 руб.
от 25 шт. —
71 280 руб.
Добавить в корзину 1 шт.
на сумму 81 750 руб.
Номенклатурный номер: 8026801271
Бренд: MACOM
Описание
GaN HEMTs
Wolfspeed GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offer high efficiency; high gain and wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN has superior properties compared to Silicon or Gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Wolfspeed GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offer high efficiency; high gain and wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN has superior properties compared to Silicon or Gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Технические параметры
| Brand: | Wolfspeed |
| Configuration: | Single |
| Development Kit: | CGHV40100-TB |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Gain: | 11 dB |
| Gate-Source Cutoff Voltage: | -10 V to+2 V |
| Id - Continuous Drain Current: | 8.7 A |
| Manufacturer: | Wolfspeed |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Screw Mount |
| Operating Frequency: | 500 MHz to 2.5 GHz |
| Operating Temperature Range: | -40 C to+150 C |
| Output Power: | 100 W |
| Package / Case: | 440193 |
| Packaging: | Tray |
| Product Category: | RF JFET Transistors |
| Product Type: | RF JFET Transistors |
| Product: | GaN HEMT |
| Subcategory: | Transistors |
| Technology: | GaN |
| Transistor Polarity: | N-Channel |
| Transistor Type: | HEMT |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Vgs - Gate-Source Breakdown Voltage: | 2.7 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.3 V |
