IXBH12N300
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6 280 руб.
Кратность заказа 30 шт.
от 90 шт. —
6 030 руб.
Добавить в корзину 30 шт.
на сумму 188 400 руб.
Описание
Описание Транзистор: IGBT, BiMOSFET™, 3кВ, 12А, 160Вт, TO247-3 Характеристики
| Категория | Транзистор |
| Тип | БТИЗ |
| Вид | IGBT |
Технические параметры
| Brand: | IXYS |
| Collector- Emitter Voltage VCEO Max: | 3 kV |
| Collector-Emitter Saturation Voltage: | 3.2 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 30 A |
| Continuous Collector Current Ic Max: | 30 A |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Gate-Emitter Leakage Current: | +/-100 nA |
| Manufacturer: | IXYS |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 160 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | Very High Voltage |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | BIMOSFET |
| Case | TO247-3 |
| Collector current | 12A |
| Collector-emitter voltage | 3kV |
| Features of semiconductor devices | high voltage |
| Gate charge | 62nC |
| Gate-emitter voltage | ±20V |
| Kind of package | tube |
| Manufacturer | IXYS |
| Mounting | THT |
| Power dissipation | 160W |
| Pulsed collector current | 100A |
| Technology | BiMOSFET™, FRED |
| Turn-off time | 705ns |
| Turn-on time | 460ns |
| Type of transistor | IGBT |
