CGH40180PP
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
122 000 руб.
от 10 шт. —
110 200 руб.
Добавить в корзину 1 шт.
на сумму 122 000 руб.
Номенклатурный номер: 8029017917
Бренд: MACOM
Описание
GaN HEMTs
Wolfspeed GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offer high efficiency; high gain and wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN has superior properties compared to Silicon or Gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Wolfspeed GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offer high efficiency; high gain and wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN has superior properties compared to Silicon or Gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Технические параметры
| Brand: | Wolfspeed |
| Configuration: | Dual |
| Development Kit: | CGH40180PP-TB |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Gain: | 19 dB |
| Id - Continuous Drain Current: | 24 A |
| Manufacturer: | Wolfspeed |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Screw Mount |
| Number of Channels: | 2 Channel |
| Operating Frequency: | 1 GHz to 2.5 GHz |
| Output Power: | 220 W |
| Package / Case: | 440199 |
| Packaging: | Tray |
| Product Category: | RF JFET Transistors |
| Product Type: | RF JFET Transistors |
| Product: | GaN HEMT |
| Subcategory: | Transistors |
| Technology: | GaN |
| Transistor Polarity: | N-Channel |
| Transistor Type: | HEMT |
| Vds - Drain-Source Breakdown Voltage: | 120 V |
| Vgs - Gate-Source Breakdown Voltage: | -10 V to 2 V |
| Vgs th - Gate-Source Threshold Voltage: | -3 V |
