BD139
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
13900 шт. со склада г.Москва, срок 3 недели
8 руб.
Мин. кол-во для заказа 111 шт.
Добавить в корзину 111 шт.
на сумму 888 руб.
Альтернативные предложения4
Описание
Описание Транзистор NPN, биполярный, 80В, 1,5А, 12Вт, TO126 Характеристики
| Категория | Транзистор |
| Тип | биполярный |
| Вид | NPN |
Технические параметры
| Base Product Number | BD139 -> |
| Current - Collector (Ic) (Max) | 1.5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | 150В°C (TJ) |
| Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
| Package | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Power - Max | 1.25W |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | SOT-32-3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Collector-Emitter Breakdown Voltage | 80V |
| Maximum DC Collector Current | 1.5A |
| Pd - Power Dissipation | 1.25W |
| RoHS Compliant | Yes |
| Brand: | STMicroelectronics |
| Collector- Base Voltage VCBO: | 80 V |
| Collector- Emitter Voltage VCEO Max: | 80 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Configuration: | Single |
| Continuous Collector Current: | 1.5 A |
| DC Collector/Base Gain hfe Min: | 40 |
| DC Current Gain hFE Max: | 250 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Manufacturer: | STMicroelectronics |
| Maximum DC Collector Current: | 1.5 A |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | Through Hole |
| Package / Case: | SOT-32-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 1.25 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | BD139 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Maximum Collector Base Voltage | 80 V |
| Maximum Collector Emitter Voltage | 80 V |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.25 W |
| Minimum DC Current Gain | 100, 40, 63 |
| Number of Elements per Chip | 1 |
| Package Type | SOT-32 |
| Pin Count | 3 |
| Transistor Configuration | Single |
Техническая документация
BD139-16
pdf, 152 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 144 КБ
Транзисторы кт814-825
pdf, 135 КБ
BD135 - BD136 - BD139 - BD140
pdf, 152 КБ
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
