BC849B
200 руб.
от 2 шт. —
100 руб.
от 10 шт. —
23 руб.
Добавить в корзину 1 шт.
на сумму 200 руб.
Описание
Электроэлемент
Bipolar Transistors - BJT NPN Silicon AF TRANS ISTOR
Технические параметры
| Brand | Infineon Technologies |
| Collector- Base Voltage VCBO | 30 V |
| Collector- Emitter Voltage VCEO Max | 30 V |
| Collector-Emitter Saturation Voltage | 600 mV |
| Configuration | Single |
| Continuous Collector Current | 100 mA |
| Emitter- Base Voltage VEBO | 6 V |
| Factory Pack Quantity | 48000 |
| Gain Bandwidth Product fT | 250 MHz |
| Height | 1 mm |
| Length | 2.9 mm |
| Manufacturer | Infineon |
| Maximum DC Collector Current | 100 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Part # Aliases | BC849BE6327HTSA1 BC849BE6327XT SP000010567 |
| Pd - Power Dissipation | 330 mW |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | BC849 |
| Transistor Polarity | NPN |
| Unit Weight | 0.00709 oz |
| Width | 1.3 mm |
