ZVP1320FTA, Транзистор
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см. техническую документацию
см. техническую документацию
160 руб.
Мин. кол-во для заказа 20 шт.
Добавить в корзину 20 шт.
на сумму 3 200 руб.
Описание
Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
| Continuous Drain Current (Id) @ 25В°C | 35mA |
| Power Dissipation-Max (Ta=25В°C) | 350mW |
| Rds On - Drain-Source Resistance | 80О© @ 50A,10V |
| Transistor Polarity | P Channel |
| Vds - Drain-Source Breakdown Voltage | 200V |
| Vgs - Gate-Source Voltage | 3.5V @ 1mA |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 16 ns |
| Forward Transconductance - Min: | 25 mS |
| Id - Continuous Drain Current: | 35 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 350 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Rds On - Drain-Source Resistance: | 80 Ohms |
| Rise Time: | 8 ns |
| Series: | ZVP1320 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Type: | FET |
| Typical Turn-Off Delay Time: | 8 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 35 mA |
| Maximum Drain Source Resistance | 80 Ω |
| Maximum Drain Source Voltage | 200 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 330 mW |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Width | 1.4mm |
