CG2H40010F

CG2H40010F
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см. техническую документацию
20 550 руб.
Добавить в корзину 1 шт. на сумму 20 550 руб.
Номенклатурный номер: 8029639069
Бренд: MACOM

Описание

CG2H40xx & CG2H30xx GaN HEMTs

Wolfspeed CG2H40xx and CG2H30xx GaN (Gallium Nitride) HEMTs are High Electron Mobility Transistors designed to operate from a 28V rail. The CG2H40xx and CG2H30xx Transistors offer a general-purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities of these HEMTs make them ideal for linear and compressed amplifier circuits. The CG2H40xx and CG2H30xx transistors are available in a wide variety of package types for design flexibility, including screw-down, solder-down, pill, and flange packages. Typical applications include broadband amplifiers, cellular infrastructure, and radar.

Технические параметры

Brand: Wolfspeed
Factory Pack Quantity: Factory Pack Quantity: 1
Gain: 16.5 dB
Id - Continuous Drain Current: 1.5 A
Manufacturer: Wolfspeed
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -40 C
Mounting Style: Screw Mount
Operating Frequency: DC to 6 GHz
Output Power: 10 W
Package / Case: 440166
Packaging: Tray
Product Category: RF JFET Transistors
Product Type: RF JFET Transistors
Subcategory: Transistors
Technology: GaN
Transistor Polarity: N-Channel
Transistor Type: HEMT
Vds - Drain-Source Breakdown Voltage: 120 V
Vgs - Gate-Source Breakdown Voltage: -10 V, 2 V
Vgs th - Gate-Source Threshold Voltage: -2.7 V