FCP11N60

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1 380 руб.

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Номенклатурный номер: 8003187506

Электроэлемент

Описание Транзистор N-MOSFET, полевой, 650В, 11А, 125Вт, TO220, SuperFET® Характеристики

Brand	ON Semiconductor/Fairchild
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	50
Fall Time	56 ns
Forward Transconductance - Min	9.7 S
Height	16.3 mm
Id - Continuous Drain Current	11 A
Length	10.67 mm
Manufacturer	ON Semiconductor
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-220-3
Packaging	Tube
Pd - Power Dissipation	125 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	380 mOhms
Rise Time	98 ns
RoHS	Details
Series	FCP11N60
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	119 ns
Typical Turn-On Delay Time	34 ns
Unit Weight	0.063493 oz
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	30 V
Width	4.7 mm
Case	TO220AB
Drain current	11A
Drain-source voltage	650V
Gate charge	52nC
Gate-source voltage	±30V
Kind of channel	enhanced
Kind of package	tube
Mounting	THT
On-state resistance	0.38Ω
Polarisation	unipolar
Power dissipation	125W
Type of transistor	N-MOSFET
Вес, г	3.5