FDC3601N
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
280 руб.
от 2 шт. —
190 руб.
Добавить в корзину 1 шт.
на сумму 280 руб.
Описание
Электроэлемент
Описание Транзистор: N-MOSFET; 100В; 1А; 960мВт; SuperSOT-6 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 1A |
| Drain to Source Voltage (Vdss) | 100V |
| FET Feature | Standard |
| FET Type | 2 N-Channel(Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 153pF @ 50V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power - Max | 700mW |
| Rds On (Max) @ Id, Vgs | 500 mOhm @ 1A, 10V |
| Series | PowerTrenchВ® |
| Supplier Device Package | SuperSOTв(ў-6 |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 4 ns |
| Forward Transconductance - Min: | 3.6 S |
| Id - Continuous Drain Current: | 1 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | SSOT-6 |
| Part # Aliases: | FDC3601N_NL |
| Pd - Power Dissipation: | 960 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Qg - Gate Charge: | 5 nC |
| Rds On - Drain-Source Resistance: | 500 mOhms |
| Rise Time: | 4 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 11 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 960 mW |
| Number of Elements per Chip | 2 |
| Package Type | TSOT-23 |
| Pin Count | 6 |
| Вес, г | 0.001 |
Техническая документация
Datasheet
pdf, 325 КБ
Datasheet FDC3601N
pdf, 304 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
