FDD13AN06A0
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Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 60В, 50А, 115Вт, DPAK Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 25 ns |
| Height | 2.39 mm |
| Id - Continuous Drain Current | 50 A |
| Length | 6.73 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Part # Aliases | FDD13AN06A0_NL |
| Pd - Power Dissipation | 115 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 11.5 mOhms |
| Rise Time | 77 ns |
| RoHS | Details |
| Series | FDD13AN06A0 |
| Technology | Si |
| Tradename | PowerTrench |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 26 ns |
| Typical Turn-On Delay Time | 9 ns |
| Unit Weight | 0.009184 oz |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 6.22 mm |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 25 ns |
| Id - Continuous Drain Current: | 50 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | DPAK-3 |
| Part # Aliases: | FDD13AN06A0_NL |
| Pd - Power Dissipation: | 115 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 29 nC |
| Rds On - Drain-Source Resistance: | 11.5 mOhms |
| Rise Time: | 77 ns |
| Series: | FDD13AN06A0 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 26 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 0.66 |
Техническая документация
Datasheet
pdf, 758 КБ
Документация
pdf, 762 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
