FDMS3660S
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730 руб.
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620 руб.
от 5 шт. —
544 руб.
от 10 шт. —
507.50 руб.
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Описание
Электроэлемент
MOSFET, DUAL N CH, 30V, 60A, POWER 56-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Configuration | Dual |
| Factory Pack Quantity | 3000 |
| Height | 1.1 mm |
| Id - Continuous Drain Current | 13 A, 30 A |
| Length | 6 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | Power-56-8 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 2.2 W, 2.5 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 8 mOhms, 1.8 mOhms |
| RoHS | Details |
| Series | FDMS3660S |
| Technology | Si |
| Tradename | Power Stage PowerTrench |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Unit Weight | 0.006032 oz |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 20 V, 12 V |
| Width | 5 mm |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 13 A, 30 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | Power-56-8 |
| Pd - Power Dissipation: | 2.2 W, 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 29 nC, 87 nC |
| Rds On - Drain-Source Resistance: | 8 mOhms, 1.8 mOhms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V, -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
| Вес, г | 0.113 |
Техническая документация
Datasheet
pdf, 698 КБ
Документация
pdf, 540 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
