FDS6681Z
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см. техническую документацию
см. техническую документацию
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Описание
Электроэлемент
Описание Транзистор P-MOSFET, полевой, -30В, -20А, 2,5Вт, SO8, PowerTrench® Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Channel Mode | Enhancement |
| Maximum Continuous Drain Current | 20A |
| Maximum Drain Source Resistance | 0.0046? |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±25V |
| Minimum Operating Temperature | -55°C |
| Number of Elements per Chip | 1 |
| Pin Count | 8 |
| Product Height | 1.5mm |
| Product Length | 5mm |
| Product Width | 3.99mm |
| Supplier Package | SOIC N |
| Typical Fall Time | 380ns |
| Typical Rise Time | 9ns |
| Typical Turn-Off Delay Time | 660ns |
| Typical Turn-On Delay Time | 20ns |
| конфигурация | Single; Quad Drain, Triple Source |
| максимальная рабочая температура | 150°C |
| монтаж (установка) | Surface Mount |
| разрешение | Power MOSFET |
| Channel Type | P |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 2.5 W |
| Minimum Gate Threshold Voltage | 1V |
| Mounting Type | Surface Mount |
| Package Type | SOIC |
| Series | PowerTrench |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 185 nC @ 10 V |
| Width | 4mm |
| Automotive | No |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 20 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 20 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Drain Source Resistance (mOhm) | 4.6@10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Gate Source Voltage (V) | ±25 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum IDSS (uA) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 125 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 25 |
| Maximum Power Dissipation (mW) | 2500 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 105 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| PPAP | No |
| Process Technology | PowerTrench |
| Product Category | Power MOSFET |
| Standard Package Name | SO |
| Typical Diode Forward Voltage (V) | 0.7 |
| Typical Fall Time (ns) | 380 |
| Typical Gate Charge @ 10V (nC) | 185 |
| Typical Gate Charge @ Vgs (nC) | 185@10V |
| Typical Gate Plateau Voltage (V) | 3 |
| Typical Gate Threshold Voltage (V) | 1.8 |
| Typical Gate to Drain Charge (nC) | 47 |
| Typical Gate to Source Charge (nC) | 26 |
| Typical Input Capacitance @ Vds (pF) | 7540@15V |
| Typical Output Capacitance (pF) | 1400 |
| Typical Reverse Recovery Charge (nC) | 94 |
| Typical Reverse Recovery Time (ns) | 125 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 1120@15V |
| Typical Rise Time (ns) | 9 |
| Typical Turn-Off Delay Time (ns) | 660 |
| Typical Turn-On Delay Time (ns) | 20 |
| Вес, г | 0.125 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
