FDS86540, Силовой МОП-транзистор, N Канал, 60 В, 18 А, 0.0037 Ом, SOIC, Surface Mount

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840 руб.

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от 10 шт. — 750 руб.

от 100 шт. — 595 руб.

Добавить в корзину 4 шт. на сумму 3 360 руб.

Номенклатурный номер: 8077586370

Артикул: FDS86540

Полупроводники - Дискретные\МОП-транзисторы\Одиночные МОП-транзисторы

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types.

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Resistance	7 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	5 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOIC
Pin Count	8
Series	PowerTrench
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	65 nC @ 10 V
Width	3.9mm
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Id - Continuous Drain Current:	18 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOIC-8
Pd - Power Dissipation:	5 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	90 nC
Rds On - Drain-Source Resistance:	4.5 mOhms
Series:	FDS86540
Subcategory:	MOSFETs
Technology:	Si
Tradename:	PowerTrench
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Вес, г	0.18