FGH40N60SFDTU, Транзистор, IGBT 600В 80А, [TO-247]
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| 280 руб. | × | = | 280 руб. |
от 10 шт. — 140 руб.
от 30 шт. — 112.18 руб.
Описание
IGBT Discretes, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Технические параметры
Техническая документация
FGH40N60SFD
pdf, 806 КБ
Дополнительная информация
FGH40N60SFD, Field Stop IGBT 600V 40A FGH40N60SFDTU
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
