FGP3440G2-F085, БТИЗ транзистор, 26.9 А, 1.1 В, 166 Вт, 400 В, TO-220AB, 3 вывод(-ов)
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Описание
Полупроводники - Дискретные\БТИЗ\БТИЗ Одиночные
FGD3x40G2 EcoSPARK®2 N-Channel Ignition IGBTsonsemi FGD3x40G2 EcoSPARK®2 N-Channel Ignition IGBTs are designed to meet demanding emissions and high fuel efficiency requirements in present and emerging ignition systems where automotive designers need higher performance ignition coil driver technology. This latest generation of ignition IGBTs provide reduced power dissipation in a smaller footprint. The EcoSPARK 2, FGD3040G2 and FDG3440G2 ignition coil drivers, deliver up to 20 percent reduction V SAT performance without a significant reduction of Self Clamping Inductive Switching (SCIS) energy. This optimized feature reduces power dissipation, lowers heat sink requirements and operating junction temperatures. onsemi FGD3x40G2 EcoSpark 2 features include SCIS Energy (FGD3440 = 335mJ, FGD3040 = 300mJ), logic level gate drive, and they are qualified to AEC-Q101.
Технические параметры
| Collector Emitter Saturation Voltage | 1.1В |
| Collector Emitter Voltage Max | 400В |
| Continuous Collector Current | 26.9А |
| Power Dissipation | 166Вт |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | EcoSPARK 2 |
| Максимальная Рабочая Температура | 175°C |
| Монтаж транзистора | Through Hole |
| Стандарты Автомобильной Промышленности | AEC-Q101 |
| Стиль Корпуса Транзистора | TO-220AB |
| Brand: | onsemi/Fairchild |
| Collector- Emitter Voltage VCEO Max: | 400 V |
| Collector-Emitter Saturation Voltage: | 1.1 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 26.9 A |
| Continuous Collector Current Ic Max: | 25 A |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Manufacturer: | onsemi |
| Maximum Gate Emitter Voltage: | -10 V, 10 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Part # Aliases: | FGP3440G2_F085 |
| Pd - Power Dissipation: | 166 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Qualification: | AEC-Q101 |
| Series: | FGP3440G2_F085 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 2.96 |
Техническая документация
Datasheet
pdf, 1241 КБ
Datasheet FGP3440G2-F085
pdf, 580 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
