FGY75N60SMD, IGBT 600В 75А TO247
Есть в наличии более 50 шт. Отгрузка со склада в г.Москва
| 400 руб. | × | = | 400 руб. |
от 5 шт. — 370 руб.
от 50 шт. — 350 руб.
Цена и наличие в магазинах
Описание
IGBT Discretes, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Технические параметры
Структура
Максимальное напряжение кэ ,В
Максимальный ток кэ при 25 гр. С,A
Напряжение насыщения при номинальном токе, В
1.9
Управляющее напряжение,В
5
Мощность макс.,Вт
Температурный диапазон,С
-55…175
Корпус
Техническая документация
FGY75N60SMD
pdf, 426 КБ
Дополнительная информация
Datasheet FGY75N60SMD
Datasheet FGY75N60SMD
FGY75N60SMD, Field Stop IGBT 600V 75A FGY75N60SMD
