FP25R12W2T4, БТИЗ массив и модульный транзистор, PIM, 25 А, 1.85 В, 175 Вт, 150 °C, Module
13 770 руб.
от 5 шт. —
12 280 руб.
от 10 шт. —
11 590 руб.
Добавить в корзину 1 шт.
на сумму 13 770 руб.
Описание
Полупроводники - Дискретные\IGBTs\БТИЗ Массивы и Модули
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.85 V |
| Configuration: | 3-Phase Inverter |
| Continuous Collector Current at 25 C: | 39 A |
| Factory Pack Quantity: | 15 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Package/Case: | EASY2B |
| Packaging: | Tray |
| Part # Aliases: | SP000307561 FP25R12W2T4BOMA1 |
| Pd - Power Dissipation: | 175 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 39 |
