IPC50N04S5L5R5ATMA1

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400 руб.
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Номенклатурный номер: 8003343789

Описание

Электроэлемент
MOSFET, AEC-Q101, N-CH, 40V, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0044ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V;

Технические параметры

AEC Qualified Number AEC-Q101
Automotive Yes
Channel Mode Enhancement
Channel Type N
Maximum Continuous Drain Current - (A) 50
Maximum Drain Source Resistance - (mOhm) 5.5@10V
Maximum Drain Source Voltage - (V) 40
Maximum Gate Source Voltage - (V) ??16
Maximum Gate Threshold Voltage - (V) 2
Maximum Power Dissipation - (mW) 42000
Military No
Number of Elements per Chip 1
Operating Temperature - (??C) -55~150
Packaging Tape and Reel
Pin Count 8
Process Technology OptiMOS 5
Supplier Package TDSON EP
Typical Gate Charge @ 10V - (nC) 17
Typical Gate Charge @ Vgs - (nC) 17@10V
Typical Input Capacitance @ Vds - (pF) 930@25V
Brand: Infineon Technologies
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 5000
Fall Time: 6 ns
Id - Continuous Drain Current: 50 A
Manufacturer: Infineon
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: TDSON-8
Packaging: Reel, Cut Tape
Part # Aliases: IPC50N04S5L-5R5 SP001273424
Pd - Power Dissipation: 42 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 23 nC
Qualification: AEC-Q101
Rds On - Drain-Source Resistance: 5.5 mOhms
Rise Time: 2 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 8 ns
Typical Turn-On Delay Time: 2 ns
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs - Gate-Source Voltage: -16 V, +16 V
Vgs th - Gate-Source Threshold Voltage: 1.6 V
Maximum Continuous Drain Current 50 A
Maximum Drain Source Voltage 16 V
Mounting Type Surface Mount
Package Type SuperSO8 5x6
Вес, г 0.013

Техническая документация

2354652
pdf, 427 КБ
Datasheet
pdf, 413 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов