IR2118SPBF, Драйвер MOSFET верхнего плеча 8SOIC

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140 руб.

Мин. кол-во для заказа 4 шт.

от 12 шт. — 120 руб.

от 23 шт. — 115 руб.

от 45 шт. — 110 руб.

Добавить в корзину 4 шт. на сумму 560 руб.

Номенклатурный номер: 8007895277

Артикул: IR2118SPBF

Микросхемы / Драйверы и ключи / Драйверы MOSFET, IGBT

Драйвер MOSFET верхнего плеча 8SOIC

Корпус	so-8
Base Product Number	IR2118 ->
Channel Type	Single
Current - Peak Output (Source, Sink)	250mA, 500mA
Driven Configuration	High-Side
ECCN	EAR99
Gate Type	IGBT, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600V
HTSUS	8542.39.0001
Input Type	Inverting
Logic Voltage - VIL, VIH	6V, 9.5V
Moisture Sensitivity Level (MSL)	2 (1 Year)
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature	-40В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	8-SOIC (0.154"", 3.90mm Width)
REACH Status	REACH Unaffected
Rise / Fall Time (Typ)	80ns, 40ns
RoHS Status	ROHS3 Compliant
Supplier Device Package	8-SOIC
Voltage - Supply	10V ~ 20V
Brand	Infineon Technologies
Configuration	Inverting
Factory Pack Quantity	2500
Fall Time	40 ns
Features	Synchronous
Height	1.5 mm(Max)
Length	5 mm(Max)
Logic Type	CMOS
Manufacturer	Infineon
Maximum Operating Temperature	+125 C
Maximum Turn-Off Delay Time	105 ns
Maximum Turn-On Delay Time	125 ns
Minimum Operating Temperature	-40 C
Moisture Sensitive	Yes
Mounting Style	SMD/SMT
Number of Outputs	1 Output
Operating Supply Current	340 uA
Output Current	200 mA
Output Voltage	10 V to 20 V
Packaging	Reel
Part # Aliases	SP001547578
Pd - Power Dissipation	625 mW
Product	MOSFET Gate Drivers
Product Category	Gate Drivers
Propagation Delay - Max	200 ns
Rise Time	80 ns
RoHS	Details
Supply Voltage - Max	20 V
Supply Voltage - Min	10 V
Type	High Side Driver
Unit Weight	0.019048 oz
Width	4 mm(Max)
Вес, г	0.2