IRFH5304TRPBF
110 руб.
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Описание
Trans MOSFET N-CH 30V 22A 8-Pin PQFN EP T/R
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | No Lead |
| Maximum Continuous Drain Current (A) | 22 |
| Maximum Diode Forward Voltage (V) | 1 |
| Maximum Drain Source Resistance (mOhm) | 4.5 10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.35 |
| Maximum IDSS (uA) | 5 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 35 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 3600 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.6 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 320 |
| Minimum Gate Threshold Voltage (V) | 1.35 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | HEXFET |
| Product Category | Power MOSFET |
| Standard Package Name | QFN |
| Supplier Package | PQFN EP |
| Typical Diode Forward Voltage (V) | 0.71 |
| Typical Fall Time (ns) | 6.6 |
| Typical Gate Charge @ 10V (nC) | 41 |
| Typical Gate Charge @ Vgs (nC) | 41 10V|16 4.5V |
| Typical Gate Plateau Voltage (V) | 3.4 |
| Typical Gate Threshold Voltage (V) | 1.8 |
| Typical Gate to Drain Charge (nC) | 5.8 |
| Typical Gate to Source Charge (nC) | 3.6 |
| Typical Input Capacitance @ Vds (pF) | 2360 10V |
| Typical Output Capacitance (pF) | 510 |
| Typical Reverse Recovery Charge (nC) | 44 |
| Typical Reverse Recovery Time (ns) | 19 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 220 10V |
| Typical Rise Time (ns) | 25 |
| Typical Switch Charge (nC) | 8.5 |
| Typical Turn-Off Delay Time (ns) | 12 |
| Typical Turn-On Delay Time (ns) | 13 |
| Continuous Drain Current (Id) | - |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | - |
| Drain Source Voltage (Vdss) | - |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Input Capacitance (Ciss@Vds) | - |
| Power Dissipation (Pd) | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | - |
| Type | - |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
