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IRFP340

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1 090 руб.

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Номенклатурный номер: 8002025898

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Электроэлемент

N CHANNEL MOSFET, 400V, 11A, TO-247, Transistor Polarity:N Channel, Continuous Drain Current Id:11A, Drain Source Voltage Vds:400V, On Resistance Rds(on):550mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, No. of Pins:3 , RoHS Compliant: Yes

Технические параметры

Transistor Polarity	N Channel; Continuous Drain Current Id
EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.10.00.80
Lead Shape	Through Hole
Typical Reverse Recovery Time (ns)	330
Tab	Tab
Package Height	20.7(Max)
Typical Gate Plateau Voltage (V)	5.9
Maximum Pulsed Drain Current @ TC=25°C (A)	44
Package Width	5.21(Max)
Package Length	15.87(Max)
Maximum Positive Gate Source Voltage (V)	20
Mounting	Through Hole
PCB changed	3
Maximum Diode Forward Voltage (V)	2
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	400
Maximum Gate Source Voltage (V)	±20
Operating Junction Temperature (°C)	-55 to 150
Maximum Gate Threshold Voltage (V)	4
Maximum Continuous Drain Current (A)	11
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	550@10V
Typical Gate Charge @ Vgs (nC)	62(Max)@10V
Typical Gate Charge @ 10V (nC)	62(Max)
Typical Gate to Drain Charge (nC)	30(Max)
Typical Gate to Source Charge (nC)	10(Max)
Typical Reverse Recovery Charge (nC)	2500
Typical Input Capacitance @ Vds (pF)	1400@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	130@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	400
Maximum Power Dissipation (mW)	150000
Typical Fall Time (ns)	24
Typical Rise Time (ns)	27
Typical Turn-Off Delay Time (ns)	50
Typical Turn-On Delay Time (ns)	14
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Automotive	No
Supplier Package	TO-247AC
Standard Package Name	TO-247
Pin Count	3
Military	No
Id - непрерывный ток утечки	11 A
Pd - рассеивание мощности	150 W
Qg - заряд затвора	62 nC
Rds Вкл - сопротивление сток-исток	550 mOhms
Vds - напряжение пробоя сток-исток	400 V
Vgs - напряжение затвор-исток	20 V, + 20 V
Vgs th - пороговое напряжение затвор-исток	2 V
Вид монтажа	Through Hole
Высота	20.82 mm
Длина	15.87 mm
Канальный режим	Enhancement
Категория продукта	МОП-транзистор
Количество каналов	1 Channel
Конфигурация	Single
Максимальная рабочая температура	+ 150 C
Минимальная рабочая температура	55 C
Подкатегория	MOSFETs
Полярность транзистора	N-Channel
Размер фабричной упаковки	500
Серия	IRFP
Технология	Si
Тип продукта	MOSFET
Торговая марка	Vishay Semiconductors
Упаковка	Tube
Упаковка / блок	TO-247-3
Ширина	5.31 mm
Base Product Number	IRFP340 ->
Current - Continuous Drain (Id) @ 25В°C	11A (Tc)
Drain to Source Voltage (Vdss)	400V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-247-3
Power Dissipation (Max)	150W (Tc)
Rds On (Max) @ Id, Vgs	550mOhm @ 6.6A, 10V
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Вес, г	8.5