IRFR9220TRPBF, Транзистор полевой P-канальный 200В 3.6А 42Вт
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой P-канальный 200В 3.6А 42Вт
Технические параметры
| Корпус | DPAK/TO-252AA | |
| Automotive | No | |
| Channel Mode | Enhancement | |
| Channel Type | P | |
| Configuration | Single | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant with Exemption | |
| Maximum Continuous Drain Current (A) | 3.6 | |
| Maximum Diode Forward Voltage (V) | 6.3 | |
| Maximum Drain Source Resistance (mOhm) | 1500@10V | |
| Maximum Drain Source Voltage (V) | 200 | |
| Maximum Gate Source Leakage Current (nA) | 100 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Gate Threshold Voltage (V) | 4 | |
| Maximum IDSS (uA) | 100 | |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum Positive Gate Source Voltage (V) | 20 | |
| Maximum Power Dissipation (mW) | 2500 | |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 | |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 14 | |
| Minimum Gate Threshold Voltage (V) | 2 | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Operating Junction Temperature (°C) | -55 to 150 | |
| Packaging | Tape and Reel | |
| Part Status | Active | |
| PCB changed | 2 | |
| Pin Count | 3 | |
| PPAP | No | |
| Process Technology | HEXFET | |
| Product Category | Power MOSFET | |
| Standard Package Name | TO-252 | |
| Supplier Package | DPAK | |
| Tab | Tab | |
| Typical Fall Time (ns) | 19 | |
| Typical Gate Charge @ 10V (nC) | 20(Max) | |
| Typical Gate Charge @ Vgs (nC) | 20(Max)@10V | |
| Typical Gate Plateau Voltage (V) | 7.3 | |
| Typical Gate to Drain Charge (nC) | 11(Max) | |
| Typical Gate to Source Charge (nC) | 3.3(Max) | |
| Typical Input Capacitance @ Vds (pF) | 340@25V | |
| Typical Output Capacitance (pF) | 110 | |
| Typical Reverse Recovery Charge (nC) | 970 | |
| Typical Reverse Recovery Time (ns) | 150 | |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 33@25V | |
| Typical Rise Time (ns) | 27 | |
| Typical Turn-Off Delay Time (ns) | 7.3 | |
| Typical Turn-On Delay Time (ns) | 8.8 | |
| Brand: | Vishay Semiconductors | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 | |
| Fall Time: | 19 ns | |
| Id - Continuous Drain Current: | 3.6 A | |
| Manufacturer: | Vishay | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package / Case: | TO-252-3 | |
| Part # Aliases: | IRFR9220TRPBF-BE3 | |
| Pd - Power Dissipation: | 42 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 20 nC | |
| Rds On - Drain-Source Resistance: | 1.5 Ohms | |
| Rise Time: | 27 ns | |
| Series: | IRFR/U | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Transistor Polarity: | P-Channel | |
| Transistor Type: | 1 P-Channel | |
| Typical Turn-Off Delay Time: | 7.3 ns | |
| Typical Turn-On Delay Time: | 8.8 ns | |
| Vds - Drain-Source Breakdown Voltage: | 200 V | |
| Vgs - Gate-Source Voltage: | -20 V, +20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 4 V | |
| Maximum Continuous Drain Current | 3.6 A | |
| Maximum Drain Source Resistance | 1.5 Ω | |
| Maximum Drain Source Voltage | 200 V | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Power Dissipation | 42 W | |
| Minimum Gate Threshold Voltage | 2V | |
| Minimum Operating Temperature | -55 °C | |
| Mounting Type | Surface Mount | |
| Package Type | DPAK(TO-252) | |
| Transistor Configuration | Single | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V | |
| Width | 6.22mm | |
| Вес, г | 1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
