IRLR120NPBF, Транзистор, N-канал, 100В, 10А, 0.185Ом [D-PAK]
The IRLR120NPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
• Advanced process technology
• Fast switching
• Fully avalanche rating
• Low static drain-to-source ON-resistance
• Dynamic dV/dt rating
• Logic level