MRF101AN, РЧ полевой транзистор, 133 В, 182 Вт, 1.8 МГц, 250 МГц, TO-220
см. техническую документацию
Описание
These devices are designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The devices are exceptionally rugged and exhibit high performance up to 250 MHz.
• Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration
• Characterized from 30 to 50 V
• Suitable for linear application
• Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
• Included in NXP product longevity program with assured supply for a minimum of 15 years after launch
Технические параметры
| Channel Type | N Channel |
| Power Dissipation | 182Вт |
| Количество Выводов | 3вывод(-ов) |
| Корпус РЧ Транзистора | TO-220 |
| Линейка Продукции | MRF101AN; MRF101BN |
| Максимальная Рабочая Температура | 175°C |
| Максимальная Рабочая Частота | 250МГц |
| Минимальная Рабочая Частота | 1.8МГц |
| Монтаж транзистора | Through Hole |
| Напряжение Истока-стока Vds | 133В |
| Рассеиваемая Мощность | 182Вт |
| Стиль Корпуса Транзистора | TO-220 |
| Base Product Number | MRF101 -> |
| Current - Test | 100mA |
| Current Rating (Amps) | 10ВµA |
| ECCN | EAR99 |
| Frequency | 1.8MHz ~ 250MHz |
| Gain | 21.1dB |
| HTSUS | 8541.29.0075 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Package | Tube |
| Package / Case | TO-220-3 |
| Power - Output | 115W |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-220-3 |
| Transistor Type | LDMOS |
| Voltage - Rated | 133V |
| Voltage - Test | 50V |
| Вес, г | 0.4 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
